The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Feb. 22, 2019
Applicant:
Korea Institute of Science and Technology, Seoul, KR;
Inventors:
Assignee:
KOREA INSTITUTE OF SCIENCE AND TECHNOLOGY, Seoul, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/205 (2006.01); H01L 29/66 (2006.01); H01L 29/737 (2006.01); H01L 29/78 (2006.01); H01L 29/08 (2006.01); H01L 29/735 (2006.01); H01L 29/10 (2006.01);
U.S. Cl.
CPC ...
H01L 29/205 (2013.01); H01L 29/0808 (2013.01); H01L 29/0821 (2013.01); H01L 29/1008 (2013.01); H01L 29/6625 (2013.01); H01L 29/66318 (2013.01); H01L 29/735 (2013.01); H01L 29/737 (2013.01); H01L 29/78 (2013.01);
Abstract
Provided is a Group III-V compound semiconductor device. The device includes a substrate, a compound semiconductor layer provided on the substrate; and a buffer layer interposed between the compound semiconductor layer and the substrate. The compound semiconductor layer includes a first semiconductor area having a first conductivity type and a second semiconductor area having a second conductivity type. The buffer layer includes a high electron density area. In the buffer layer, an electron density of the high electron density area is higher than an electron density outside the high electron density area.