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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11107844 B1

PDFFull Text
Date of Patent:
Aug. 31, 2021

Filed:

May. 30, 2018

Display device

Applicant:

Lg Display Co., Ltd., Seoul, KR;

Inventors:

SoYeon Je, Goyang-si, KR;

Hyuk Ji, Paju-si, KR;

Assignee:

LG DISPLAY CO., LTD., Seoul, KR;

Attorney:

Birch, Stewart, Kolasch & Birch, LLP

Primary Examiner:

Shaun M Campbell

Assistant Examiner:

Aneta B Cieslewicz

Int. Cl.
CPC ...
H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 51/52 (2006.01); H01L 21/02 (2006.01); H01L 29/66 (2006.01); H01L 21/4757 (2006.01); H01L 21/443 (2006.01); H01L 27/32 (2006.01); H01L 51/56 (2006.01); H01L 21/4763 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1251 (2013.01); H01L 21/02532 (2013.01); H01L 21/02565 (2013.01); H01L 21/02592 (2013.01); H01L 21/02667 (2013.01); H01L 27/124 (2013.01); H01L 27/1222 (2013.01); H01L 27/1225 (2013.01); H01L 27/1248 (2013.01); H01L 27/1274 (2013.01); H01L 29/66757 (2013.01); H01L 29/66969 (2013.01); H01L 29/7869 (2013.01); H01L 29/78618 (2013.01); H01L 29/78675 (2013.01); H01L 29/78696 (2013.01); H01L 21/0217 (2013.01); H01L 21/02164 (2013.01); H01L 21/02274 (2013.01); H01L 21/443 (2013.01); H01L 21/47573 (2013.01); H01L 21/47635 (2013.01); H01L 27/1266 (2013.01); H01L 27/1288 (2013.01); H01L 27/3246 (2013.01); H01L 27/3248 (2013.01); H01L 27/3258 (2013.01); H01L 27/3262 (2013.01); H01L 27/3276 (2013.01); H01L 51/5253 (2013.01); H01L 51/56 (2013.01); H01L 2227/323 (2013.01);
Abstract

A display device can include a first thin film transistor including a first active layer including a first semiconductor material, a first gate electrode overlapping with the first active layer, and a first source electrode and a first drain electrode both electrically connected to the first active layer; a separation insulating layer disposed on the first thin film transistor; and a second thin film transistor disposed on the separation insulating layer and including: a second active layer including a second semiconductor material different from the first semiconductor material, a second gate electrode overlapping with the second active layer, and a second source electrode and a second drain electrode both electrically connected to the second active layer, in which the second active layer of the second thin film transistor has a first thickness and a second thickness greater than the first thickness.

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