The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Sep. 22, 2020
Applicant:

Semiconductor Energy Laboratory Co., Ltd., Atsugi, JP;

Inventors:

Shunpei Yamazaki, Tokyo, JP;

Kenichi Okazaki, Tochigi, JP;

Masahiro Katayama, Tochigi, JP;

Masataka Nakada, Tochigi, JP;

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H01L 27/12 (2006.01); H01L 29/786 (2006.01); H01L 29/49 (2006.01); H01L 27/32 (2006.01);
U.S. Cl.
CPC ...
H01L 27/1225 (2013.01); H01L 27/1255 (2013.01); H01L 27/14609 (2013.01); H01L 27/14612 (2013.01); H01L 27/14634 (2013.01); H01L 27/3265 (2013.01); H01L 29/4908 (2013.01); H01L 29/7869 (2013.01); H01L 29/78603 (2013.01); H01L 29/78645 (2013.01); H01L 29/78648 (2013.01); H01L 29/78696 (2013.01);
Abstract

To provide a semiconductor device including a planar transistor having an oxide semiconductor and a capacitor. In a semiconductor device, a transistor includes an oxide semiconductor film, a gate insulating film over the oxide semiconductor film, a gate electrode over the gate insulating film, a second insulating film over the gate electrode, a third insulating film over the second insulating film, and a source and a drain electrodes over the third insulating film; the source and the drain electrodes are electrically connected to the oxide semiconductor film; a capacitor includes a first and a second conductive films and the second insulating film; the first conductive film and the gate electrode are provided over the same surface; the second conductive film and the source and the drain electrodes are provided over the same surface; and the second insulating film is provided between the first and the second conductive films.


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