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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11107812 B1

PDFFull Text
Date of Patent:
Aug. 31, 2021

Filed:

Nov. 26, 2019

Method of fabricating stacked semiconductor device

Applicant:

Imec Vzw, Leuven, BE;

Inventors:

Boon Teik Chan, Wilsele, BE;

Zheng Tao, Heverlee, BE;

Steven Demuynck, Aarschot, BE;

Assignee:

IMEC vzw, Leuven, BE;

Attorney:

Knobbe, Martens, Olson & Bear, LLP

Primary Examiner:

Nikolay K Yushin

Int. Cl.
CPC ...
H01L 21/00 (2006.01); H01L 27/00 (2006.01); H01L 29/00 (2006.01); H01L 27/092 (2006.01); H01L 21/02 (2006.01); H01L 21/3065 (2006.01); H01L 21/308 (2006.01); H01L 21/8238 (2006.01); H01L 29/06 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0922 (2013.01); H01L 21/02532 (2013.01); H01L 21/02603 (2013.01); H01L 21/308 (2013.01); H01L 21/3065 (2013.01); H01L 21/823807 (2013.01); H01L 21/823814 (2013.01); H01L 21/823828 (2013.01); H01L 21/823871 (2013.01); H01L 29/0673 (2013.01); H01L 29/41733 (2013.01); H01L 29/42392 (2013.01); H01L 29/66545 (2013.01); H01L 29/66742 (2013.01); H01L 29/78684 (2013.01); H01L 29/78696 (2013.01);
Abstract

The disclosed technology relates to a method of forming a stacked semiconductor device. One aspect includes fin structures formed by upper and lower channel layers which are separated by an intermediate layer. After preliminary fun cuts are formed in the fin structure, a sacrificial spacer is formed that covers end surfaces of an upper channel layer portion. Final fin cuts are formed in the fin structure where the lower channel layer is etched which defines a lower channel layer portion. Lower source/drain regions are formed on end surfaces of the lower channel layer portion. The sacrificial spacer shields the end surfaces of the upper channel layer portion allowing for selective deposition of material for the lower source/drain regions.

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