The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Apr. 24, 2019
Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Krishna Praveen Mysore Rajagopal, Santa Clara, CA (US);

Mariano Dissegna, Plano, TX (US);

Assignee:
Attorneys:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/02 (2006.01); H01L 27/06 (2006.01); H02H 9/04 (2006.01); H01L 29/80 (2006.01); H01L 29/78 (2006.01); H01L 49/02 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0266 (2013.01); H01L 27/0629 (2013.01); H02H 9/046 (2013.01); H01L 28/20 (2013.01); H01L 29/78 (2013.01); H01L 29/80 (2013.01);
Abstract

Described examples include an integrated circuit includes a protected node and a first transistor having a source coupled to the protected node, a gate and a drain coupled to a ground, wherein the first transistor is a MOSFET transistor. The integrated circuit also includes a second transistor having a first current handling terminal coupled to the protected node, a second current handling terminal coupled to the ground and a control terminal coupled to a reference potential, where the second transistor is configured to be off when a first voltage on the control terminal of the second transistor is less than a second voltage on the first current handling terminal of the second transistor.


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