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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11107720 B1

PDFFull Text
Date of Patent:
Aug. 31, 2021

Filed:

Dec. 05, 2019

Methods of manufacturing vertical semiconductor diodes using an engineered substrate

Applicant:

Qromis, Inc., Santa Clara, CA (US);

Inventors:

Vladimir Odnoblyudov, Danville, CA (US);

Dilip Risbud, San Jose, CA (US);

Ozgur Aktas, Pleasanton, CA (US);

Cem Basceri, Los Gatos, CA (US);

Assignee:

Qromis, Inc., Santa Clara, CA (US);

Attorney:

Kilpatrick Townsend & Stockton LLP

Primary Examiner:

Bilkis Jahan

Int. Cl.
CPC ...
H01L 29/861 (2006.01); H01L 21/683 (2006.01); H01L 21/762 (2006.01); H01L 29/778 (2006.01); H01L 21/285 (2006.01); H01L 21/18 (2006.01); H01L 21/02 (2006.01); H01L 21/28 (2006.01); H01L 21/48 (2006.01); H01L 29/10 (2006.01); H01L 29/20 (2006.01); H01L 29/205 (2006.01); H01L 29/417 (2006.01); H01L 29/423 (2006.01); H01L 29/66 (2006.01); C30B 25/18 (2006.01); C30B 29/06 (2006.01); C30B 29/40 (2006.01); H01L 29/872 (2006.01); H01L 29/40 (2006.01);
U.S. Cl.
CPC ...
H01L 21/6835 (2013.01); C30B 25/183 (2013.01); C30B 29/06 (2013.01); C30B 29/406 (2013.01); H01L 21/0242 (2013.01); H01L 21/0254 (2013.01); H01L 21/0257 (2013.01); H01L 21/02428 (2013.01); H01L 21/02458 (2013.01); H01L 21/18 (2013.01); H01L 21/28264 (2013.01); H01L 21/28587 (2013.01); H01L 21/4807 (2013.01); H01L 21/762 (2013.01); H01L 29/1033 (2013.01); H01L 29/2003 (2013.01); H01L 29/205 (2013.01); H01L 29/4175 (2013.01); H01L 29/4236 (2013.01); H01L 29/42376 (2013.01); H01L 29/66143 (2013.01); H01L 29/66204 (2013.01); H01L 29/66462 (2013.01); H01L 29/7786 (2013.01); H01L 29/7787 (2013.01); H01L 29/861 (2013.01); H01L 29/8613 (2013.01); H01L 29/872 (2013.01); H01L 29/1066 (2013.01); H01L 29/402 (2013.01); H01L 2221/6835 (2013.01); H01L 2221/68345 (2013.01);
Abstract

A semiconductor diode includes an engineered substrate including a substantially single crystal layer, a buffer layer coupled to the substantially single crystal layer, and a semi-insulating layer coupled to the buffer layer. The semiconductor diode also includes a first N-type gallium nitride layer coupled to the semi-insulating layer and a second N-type gallium nitride layer coupled to the first N-type gallium nitride layer. The first N-type gallium nitride layer has a first doping concentration and the second N-type gallium nitride layer has a second doping concentration less than the first doping concentration. The semiconductor diode further includes a P-type gallium nitride layer coupled to the second N-type gallium nitride layer, an anode contact coupled to the P-type gallium nitride layer, and a cathode contact coupled to a portion of the first N-type gallium nitride layer.

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