The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Jun. 12, 2018
Sumco Corporation, Tokyo, JP;
Ryosuke Okuyama, Tokyo, JP;
SUMCO CORPORATION, Tokyo, JP;
Abstract
Provided is a semiconductor epitaxial wafer in which the concentration of hydrogen in a modifying layer can be maintained at a high level and the crystallinity of an epitaxial layer is excellent. A semiconductor epitaxial wafer has a semiconductor wafer, a modifying layer formed in a surface portion of the semiconductor wafer, which modifying layer has hydrogen contained as a solid solution in the semiconductor wafer, and an epitaxial layer formed on the modifying layer. The concentration profile of hydrogen in the modifying layer in the thickness direction from a surface of the epitaxial layer is a double peak concentration profile including a first peak shallower in the depth direction and a second peak deeper in the depth direction.