The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Sep. 13, 2019
Applicant:

Qualcomm Incorporated, San Diego, CA (US);

Inventors:

Ying Duan, San Diego, CA (US);

Shih-Wei Chou, San Diego, CA (US);

Mansoor Basha Shaik, Bangalore, IN;

Harry Dang, San Diego, CA (US);

Abhay Dixit, San Diego, CA (US);

Assignee:

QUALCOMM Incorporated, San Diego, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 13/20 (2006.01); H02H 9/04 (2006.01); H03K 3/023 (2006.01);
U.S. Cl.
CPC ...
G06F 13/20 (2013.01); H02H 9/045 (2013.01); H03K 3/023 (2013.01);
Abstract

In certain aspects, a device comprises one or more IO inputs; a first receiver coupled to a first supply voltage and the one or more IO inputs, wherein the first receiver comprises thick oxide transistors; and a high-speed circuit comprising: an isolation block coupled to the one or more IO inputs, wherein the isolation block comprises thick oxide transistors; and a second receiver coupled to the isolation block and a second supply voltage, wherein the second receiver comprises thin oxide transistors.


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