The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 31, 2021
Filed:
Aug. 30, 2018
The Regents of the University of California, Oakland, CA (US);
Baicheng Yao, Los Angeles, CA (US);
Shu-Wei Huang, Los Angeles, CA (US);
Chee Wei Wong, Los Angeles, CA (US);
Abhinav Kumar Vinod, Los Angeles, CA (US);
The Regents of the University of California, Oakland, CA (US);
Abstract
Based on graphene heterostructure in chip-scale silicon nitride microresonators, optoelectronic control and modulation in frequency combs via group velocity dispersion modulation can be demonstrated. By tuning graphene Fermi level from 0.50 eV to 0.65 eV via electric-field gating, deterministic in-cavity group velocity dispersion control from anomalous (−62 fs/mm) to normal (+9 fs/mm) can be achieved with Q factor remaining high at 10. Consequently, both the primary comb lines and the full comb spectra can be controllable dynamically with the on/off switching of the Cherenkov radiation, the tuning of the primary comb lines from 2.3 THz to 7.2 THz, and the comb span control from zero comb lines to ˜781 phase-locked comb lines, directly via the DC voltage.