The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Dec. 01, 2017
Applicant:

Rockley Photonics Limited, London, GB;

Inventors:

Hooman Abediasl, Pasadena, CA (US);

Damiana LeRose, Pasadena, CA (US);

Amit Singh Nagra, Altadena, CA (US);

Guomin Yu, Glendora, CA (US);

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G02F 1/025 (2006.01); G02F 1/017 (2006.01); H01L 31/0232 (2014.01); G02B 6/12 (2006.01); G02F 1/015 (2006.01);
U.S. Cl.
CPC ...
G02B 6/12 (2013.01); G02F 1/025 (2013.01); H01L 31/02327 (2013.01); G02B 2006/12061 (2013.01); G02B 2006/12097 (2013.01); G02F 1/0157 (2021.01);
Abstract

A waveguide optoelectronic device comprising a rib waveguide region, and method of manufacturing a rib waveguide region, the rib waveguide region having: a base of a first material, and a ridge extending from the base, at least a portion of the ridge being formed from a chosen semiconductor material which is different from the material of the base wherein the silicon base includes a first slab region at a first side of the ridge and a second slab region at a second side of the ridge; and wherein: a first doped region extends along: the first slab region and along a first sidewall of the ridge, the first sidewall contacting the first slab region; and a second doped region extends along: the second slab region and along a second sidewall of the ridge, the second sidewall contacting the second slab region.


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