The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 31, 2021

Filed:

Apr. 06, 2017
Applicant:

H.c. Starck Tungsten Gmbh, Munich, DE;

Inventors:

Tino Saeuberlich, Bad Harzburg, DE;

Johannes Poetschke, Dresden, DE;

Volkmar Richter, Dresden, DE;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C22C 29/08 (2006.01); B22F 3/15 (2006.01); B22F 3/105 (2006.01); B22F 3/16 (2006.01); B22F 5/02 (2006.01); B22F 5/00 (2006.01);
U.S. Cl.
CPC ...
C22C 29/08 (2013.01); B22F 3/105 (2013.01); B22F 3/15 (2013.01); B22F 3/16 (2013.01); B22F 5/02 (2013.01); B22F 2005/001 (2013.01); B22F 2302/10 (2013.01); B22F 2998/10 (2013.01);
Abstract

The invention relates to a method for producing a carbide with a toughness-increasing structure, comprising the following steps: providing a hard material powder, wherein the average BET particle size of the hard material powder is less than 1.0 mm; mixing the hard material powder with a binder powder; shaping the mixture made of hard material powder and binder powder to form a green body; and sintering the green body. The invention also relates to a carbide with a toughness-increasing structure comprising a phase made of hard material particles and a phase made of binder metal heterogeneously distributed in the carbide, which is present in the form of binder islands, wherein the carbide with a toughness-increasing structure produced after the sintering has a phase made of hard material particles with an average particle size in the region between 1 nm and 1000 nm, and the binder islands have an average size of 0.1 μm to 10.0 μm and an average distance between the binder islands of 1.0 μm to 7.0 μm.


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