The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Jun. 02, 2020
Applicant:

Phison Electronics Corp., Miaoli, TW;

Inventors:

Wei Lin, Taipei, TW;

Shih-Jia Zeng, Hsinchu, TW;

Yu-Cheng Hsu, Yilan County, TW;

Yu-Siang Yang, New Taipei, TW;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03M 13/01 (2006.01); G11C 29/12 (2006.01); G11C 29/52 (2006.01); H03M 13/11 (2006.01); H03M 13/15 (2006.01);
U.S. Cl.
CPC ...
H03M 13/015 (2013.01); G11C 29/12005 (2013.01); G11C 29/52 (2013.01); H03M 13/1105 (2013.01); H03M 13/1575 (2013.01);
Abstract

A memory control method for a rewritable non-volatile memory module is provided according to an exemplary embodiment of the disclosure. The method includes: sending a first read command sequence which indicates a reading of a first physical unit by using a first read voltage level to obtain first data; decoding the first data; sending a second read command sequence which indicates a reading of the first physical unit by using a second read voltage level to obtain second data; decoding the second data with assistance information to improve a decoding success rate of the second data if the second read voltage level meets a first condition or the second data meets a second condition; and decoding the second data without the assistance information if the second read voltage level does not meet the first condition and the second data does not meet the second condition.


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