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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11101405 B1

PDFFull Text
Date of Patent:
Aug. 24, 2021

Filed:

Feb. 06, 2020

Led with internally confined current injection area

Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Kelly McGroddy, San Francisco, CA (US);

Hsin-Hua Hu, Los Altos, CA (US);

Andreas Bibl, Los Altos, CA (US);

Clayton Ka Tsun Chan, Fremont, CA (US);

Daniel Arthur Haeger, Fremont, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:

Aikin & Gallant, LLP

Primary Examiner:

Yu-Hsi D Sun

Int. Cl.
CPC ...
H01L 33/14 (2010.01); H01L 23/00 (2006.01); H01L 25/075 (2006.01); H01L 27/15 (2006.01); H01L 33/00 (2010.01); H01L 27/01 (2006.01); H01L 33/06 (2010.01); H01L 33/30 (2010.01); H01L 33/42 (2010.01); G09G 3/32 (2016.01); H01L 33/16 (2010.01); H01L 33/20 (2010.01);
U.S. Cl.
CPC ...
H01L 33/145 (2013.01); H01L 24/75 (2013.01); H01L 24/95 (2013.01); H01L 25/0753 (2013.01); H01L 27/016 (2013.01); H01L 27/156 (2013.01); H01L 33/0093 (2020.05); H01L 33/06 (2013.01); H01L 33/14 (2013.01); H01L 33/30 (2013.01); H01L 33/42 (2013.01); G09G 3/32 (2013.01); H01L 33/0016 (2013.01); H01L 33/0095 (2013.01); H01L 33/16 (2013.01); H01L 33/20 (2013.01); H01L 2224/7598 (2013.01); H01L 2224/75305 (2013.01); H01L 2224/75725 (2013.01); H01L 2224/82203 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/12044 (2013.01);
Abstract

Methods and structures for forming arrays of LED devices are disclosed. The LED devices in accordance with embodiments of the invention may include an internally confined current injection area to reduce non-radiative recombination due to edge effects. Several manners for confining current may include etch removal of a current distribution layer, etch removal of a current distribution layer and active layer followed by mesa re-growth, isolation by ion implant or diffusion, quantum well intermixing, and oxide isolation.

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