The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Mar. 14, 2019
Applicant:
Nichia Corporation, Anan, JP;
Inventors:
Yoshinori Miyamoto, Tokushima, JP;
Tokutaro Okabe, Tokushima, JP;
Yuya Kagoshima, Tokushima, JP;
Keisuke Higashitani, Tokushima, JP;
Chiaki Ozaki, Anan, JP;
Assignee:
NICHIA CORPORATION, Anan, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 33/20 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01); H01L 33/06 (2010.01); H01L 33/00 (2010.01);
U.S. Cl.
CPC ...
H01L 33/12 (2013.01); H01L 33/007 (2013.01); H01L 33/06 (2013.01); H01L 33/32 (2013.01);
Abstract
A method for manufacturing a semiconductor device includes: preparing a wafer including sapphire, the wafer having an upper surface that includes a first region and a second region, the second region surrounding the first region and located at a position at least 2 μm higher or lower than the first region; and forming a semiconductor layer at the upper surface, the semiconductor layer including at least one layer that comprises AlGaN (0.03≤z≤0.15).