The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Nov. 08, 2018
Luxtera Llc., Wilmington, DE (US);
Gianlorenzo Masini, Carlsbad, CA (US);
Kam-Yan Hon, Oceanside, CA (US);
Subal Sahni, La Jolla, CA (US);
Attila Mekis, Carlsbad, CA (US);
Luxtera LLC, Wilmington, DE (US);
Abstract
Systems and methods for a focused field avalanche photodiode (APD) may include an absorbing layer, an anode, a cathode, an N-doped layer, a P-doped layer, and a multiplication region between the N-doped layer and the P-doped layer. Oxide interfaces are located at top and bottom surfaces of the anode, cathode, N-doped layer, P-doped layer, and multiplication region. The APD may absorb an optical signal in the absorbing layer to generate carriers, and direct them to a center of the cathode using doping profiles in the N-doped layer and the P-doped layer that vary in a direction perpendicular to the top and bottom surfaces. The doping profiles in the N-doped layer and the P-doped layer may have a peak concentration midway between the oxide interfaces, or the N-doped layer may have a peak concentration midway between the oxide interfaces while the P-doped layer may have a minimum concentration there.