The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Oct. 28, 2019
Sunpower Corporation, San Jose, CA (US);
Total Marketing Services, Puteaux, FR;
Taiqing Qiu, Los Gatos, CA (US);
Gilles Olav Tanguy Sylvain Poulain, Palaiseau, FR;
PĂ©rine Jaffrennou, San Francisco, CA (US);
Nada Habka, Bourg la Reine, FR;
Sergej Filonovich, Orsay, FR;
SunPower Corporation, San Jose, CA (US);
Total Marketing Services, Puteaux, FR;
Abstract
Described herein are methods of fabricating solar cells. In an example, a method of fabricating a solar cell includes forming an amorphous dielectric layer on the back surface of a substrate opposite a light-receiving surface of the substrate. The method also includes forming a microcrystalline silicon layer on the amorphous dielectric layer by plasma enhanced chemical vapor deposition (PECVD). The method also includes forming an amorphous silicon layer on the microcrystalline silicon layer by PECVD. The method also includes annealing the microcrystalline silicon layer and the amorphous silicon layer to form a homogeneous polycrystalline silicon layer from the microcrystalline silicon layer and the amorphous silicon layer. The method also includes forming an emitter region from the homogeneous polycrystalline silicon layer.