The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Feb. 20, 2020
Applicant:

Marvell Asia Pte, Ltd., Singapore, SG;

Inventors:

Vijay Ahirwar, Pune, IN;

Sri Varsha Rottela, Visakhapatnam, IN;

Nilesh N Khude, Pune, IN;

B Hari Ram, Chennai, IN;

Assignee:

Marvell Asia PTE, Ltd., Singapore, SG;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/04 (2006.01); H01L 31/02 (2006.01); H01L 21/28 (2006.01); G11C 11/56 (2006.01); G11C 16/10 (2006.01); G11C 16/14 (2006.01); G11C 16/26 (2006.01); H01L 27/11521 (2017.01); H01L 29/66 (2006.01); H01L 29/788 (2006.01); H01L 31/068 (2012.01); H01L 31/18 (2006.01);
U.S. Cl.
CPC ...
H01L 31/02021 (2013.01); G11C 11/5628 (2013.01); G11C 11/5635 (2013.01); G11C 11/5642 (2013.01); G11C 16/0408 (2013.01); G11C 16/10 (2013.01); G11C 16/14 (2013.01); G11C 16/26 (2013.01); H01L 27/11521 (2013.01); H01L 29/40114 (2019.08); H01L 29/66825 (2013.01); H01L 29/7883 (2013.01); H01L 31/068 (2013.01); H01L 31/18 (2013.01);
Abstract

The present disclosure describes aspects of a dual-use semiconductor device for solar power and data storage. In some aspects, a dual-use semiconductor device is selectively configured to generate power by coupling regions having a same type of doping to form a PN junction by which power is generated in response to light. The generated power may be provided to a load coupled to contacts (e.g., front and backside contacts) of the dual-use semiconductor device. The dual-use semiconductor device is also selectively configurable for data storage by decoupling the regions of the same type of doping to provide respective data storage access terminals for accessing (e.g., writing or reading) a bit value that is stored as a level of charge by a floating-gate structure of the dual-use semiconductor device. By so doing, solar power arrays implemented with dual-use semiconductor devices may also provide data storage functionality.


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