The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Nov. 19, 2018
Applicant:
Wuhan China Star Optoelectronics Technology Co., Ltd., Wuhan, CN;
Inventors:
Assignee:
Other;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/78 (2006.01); H01L 29/786 (2006.01); H01L 21/02 (2006.01); H01L 29/10 (2006.01); H01L 29/66 (2006.01);
U.S. Cl.
CPC ...
H01L 29/78696 (2013.01); H01L 21/02532 (2013.01); H01L 21/02595 (2013.01); H01L 29/1033 (2013.01); H01L 29/6675 (2013.01); H01L 29/78672 (2013.01);
Abstract
A low temperature polysilicon layer, a thin film transistor, and a method for manufacturing same are provided. The low temperature polysilicon layer includes a substrate, at least one buffer layer, and a polysilicon layer. The polysilicon layer is disposed on the at least one buffer layer. The polysilicon layer includes a channel region, two low doped regions disposed on two sides of the channel region, and two high doped regions disposed on an outer side of the low doped regions. Thicknesses of an edge of the channel region and at least one portion of the low doped regions are less than a thickness of another position of the polysilicon layer.