The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Jan. 10, 2019
Applicant:
Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute, JP;
Inventors:
Keita Kataoka, Nagakute, JP;
Tetsuo Narita, Nagakute, JP;
Assignee:
KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/02389 (2013.01); H01L 21/266 (2013.01); H01L 21/324 (2013.01); H01L 29/0619 (2013.01); H01L 29/0865 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7804 (2013.01); H01L 29/7813 (2013.01);
Abstract
A method of manufacturing a group III nitride semiconductor substrate may comprise introducing group III element vacancies to a first region of the group III nitride semiconductor substrate. The method may comprise introducing an acceptor element to a second region of the group III nitride semiconductor substrate. The second region may contact the first region at least in part. The method may comprise performing annealing to activate the acceptor element in the second region.