logo

For the Inventor, By the Inventor

The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11101351 B1

PDFFull Text
Date of Patent:
Aug. 24, 2021

Filed:

Jan. 10, 2019

Group iii nitride semiconductor device and method of manufacturing group iii nitride semiconductor substrate

Applicant:

Kabushiki Kaisha Toyota Chuo Kenkyusho, Nagakute, JP;

Inventors:

Keita Kataoka, Nagakute, JP;

Tetsuo Narita, Nagakute, JP;

Assignee:

KABUSHIKI KAISHA TOYOTA CHUO KENKYUSHO, Nagakute, JP;

Attorney:

Oliff PLC

Primary Examiner:

Eugene Lee

Int. Cl.
CPC ...
H01L 29/20 (2006.01); H01L 29/78 (2006.01); H01L 29/423 (2006.01); H01L 29/08 (2006.01); H01L 29/10 (2006.01); H01L 21/02 (2006.01); H01L 29/06 (2006.01); H01L 29/66 (2006.01); H01L 21/266 (2006.01); H01L 21/324 (2006.01);
U.S. Cl.
CPC ...
H01L 29/2003 (2013.01); H01L 21/02389 (2013.01); H01L 21/266 (2013.01); H01L 21/324 (2013.01); H01L 29/0619 (2013.01); H01L 29/0865 (2013.01); H01L 29/1095 (2013.01); H01L 29/4236 (2013.01); H01L 29/66734 (2013.01); H01L 29/7804 (2013.01); H01L 29/7813 (2013.01);
Abstract

A method of manufacturing a group III nitride semiconductor substrate may comprise introducing group III element vacancies to a first region of the group III nitride semiconductor substrate. The method may comprise introducing an acceptor element to a second region of the group III nitride semiconductor substrate. The second region may contact the first region at least in part. The method may comprise performing annealing to activate the acceptor element in the second region.

Find Patent Forward Citations

Kataoka, Keita. (2021). Group iii nitride semiconductor device and method of manufacturing group iii nitride semiconductor substrate (U.S. Patent No. 11101351). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11101351

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

Loading…