The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Nov. 18, 2019
Applicant:
SK Hynix Inc., Icheon-si, KR;
Inventor:
Donghyun Woo, Icheon-si, KR;
Assignee:
SK hynix Inc., Icheon-si, KR;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/351 (2011.01); H04N 5/3745 (2011.01); H04N 5/378 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14614 (2013.01); H01L 27/14603 (2013.01); H01L 27/14607 (2013.01); H01L 27/14643 (2013.01); H04N 5/351 (2013.01); H04N 5/378 (2013.01); H04N 5/37452 (2013.01);
Abstract
An image sensor includes a substrate and first and second transfer gates. The substrate includes not only a photodiode in which photocharges corresponding to the amount of incident light are accumulated, but also a floating diffusion (FD) region in which the photocharges are received and accumulated. The first and second transfer gates transmit the photocharges from the photodiode to the floating diffusion (FD) region. At least some parts of the first transfer gate are formed to overlap with the second transfer gate.