The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Oct. 13, 2017
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventors:

Sozo Yokogawa, Kanagawa, JP;

Mikinori Ito, Kanagawa, JP;

Itaru Oshiyama, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/146 (2006.01); H04N 5/374 (2011.01);
U.S. Cl.
CPC ...
H01L 27/14612 (2013.01); H01L 27/146 (2013.01); H01L 27/1462 (2013.01); H01L 27/1463 (2013.01); H01L 27/1464 (2013.01); H01L 27/14603 (2013.01); H01L 27/14605 (2013.01); H01L 27/14621 (2013.01); H01L 27/14629 (2013.01); H01L 27/14641 (2013.01); H04N 5/374 (2013.01); H01L 27/14627 (2013.01);
Abstract

The present technology relates to an imaging element and an electronic device capable of improving sensitivity to infrared light in a back side irradiation imaging element. An imaging element is provided with a semiconductor substrate on which a photoelectric converting unit is formed, a wiring layer arranged on a side opposite to a light receiving surface of the semiconductor substrate, and provided with a wire and a reflective film, and an insulating film stacked between the semiconductor substrate and the wiring layer, in which the reflective film is arranged between the insulating film and the wire and overlaps with at least a part of the photoelectric converting unit of each pixel in a first direction in which the semiconductor substrate and the wiring layer are stacked, and a first interlayer film between the insulating film and the reflective film is thicker than the insulating film. The present technology is applicable to a back side irradiation CMOS image sensor, for example.


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