The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Sep. 04, 2019
Toshiba Memory Corporation, Tokyo, JP;
Hiroyasu Sato, Yokkaichi Mie, JP;
TOSHIBA MEMORY CORPORATION, Tokyo, JP;
Abstract
According to one embodiment, a semiconductor storage device includes: a substrate; a plurality of first gate electrodes arranged in a first direction intersecting with a substrate surface; a first semiconductor film extending in the first direction and facing the plurality of first gate electrodes; a first gate insulating film provided between the plurality of first gate electrodes and the first semiconductor film; a second gate electrode disposed farther away from the substrate than the plurality of first gate electrodes; a second semiconductor film that extends in the first direction, faces the second gate electrode, and has, in the first direction, one end connected to the first semiconductor film; and a second gate insulating film provided between the second gate electrode and the second semiconductor film. The second gate electrode includes: a first portion; and a second portion provided between the first portion and the second semiconductor film, and facing the second semiconductor film. At least a portion of the second portion is provided closer to a side of the substrate than a surface of the first portion on the side of the substrate side in the first direction.