The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Apr. 15, 2019
Applicant:
Renesas Electronics Corporation, Tokyo, JP;
Inventor:
Shibun Tsuda, Tokyo, JP;
Assignee:
RENESAS ELECTRONICS CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/28 (2006.01); H01L 27/11565 (2017.01); H01L 29/78 (2006.01); H01L 29/06 (2006.01); H01L 29/423 (2006.01);
U.S. Cl.
CPC ...
H01L 27/11565 (2013.01); H01L 21/28194 (2013.01); H01L 29/0642 (2013.01); H01L 29/40117 (2019.08); H01L 29/4234 (2013.01); H01L 29/785 (2013.01);
Abstract
The semiconductor device includes a fin FA selectively protruded from an upper surface of a semiconductor substrate SB, a gate insulating film GFformed on an upper surface and a side surface of the fin FA and having an insulating film Xand a charge storage layer CSL, and a memory gate electrode MG formed on the gate insulating film GF. Here, the thickness of the charge storage layer CSL on the upper surface of the fin FA is larger than the thickness of the charge storage layer CSL on the side surface of the fin FA.