The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Mar. 02, 2020
Applicant:

Kioxia Corporation, Tokyo, JP;

Inventors:

Masato Endo, Yokohama Kanagawa, JP;

Daisuke Arizono, Yokohama Kanagawa, JP;

Yoshikazu Harada, Kawasaki Kanagawa, JP;

Assignee:

KIOXIA CORPORATION, Tokyo, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/34 (2006.01); G11C 16/08 (2006.01); G11C 16/04 (2006.01); G11C 16/12 (2006.01); G11C 16/14 (2006.01);
U.S. Cl.
CPC ...
G11C 16/349 (2013.01); G11C 16/0433 (2013.01); G11C 16/08 (2013.01); G11C 16/12 (2013.01); G11C 16/14 (2013.01);
Abstract

A semiconductor memory device includes a memory transistor, a word line, a peripheral circuit, and electrodes connected to the peripheral circuit. In response to a write command via the electrodes, the peripheral circuit can execute a first program operation of applying a first program voltage to the word line one time when the write command is one of an n1-th write command to an n2-th write command corresponding to the memory transistor; and execute a second program operation of applying a second program voltage to the first word line at least one time when the write command is one of an (n2+1)-th write command to an n3-th write command corresponding to the memory transistor. The second program voltage in a k-th second program operation is less than the first program voltage in a k-th first program operation.


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