The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Jun. 18, 2020
Applicant:
Towerjazz Panasonic Semiconductor Co., Ltd., Uozu, JP;
Inventors:
Hiroshige Hirano, Nara, JP;
Hiroaki Kuriyama, Toyama, JP;
Assignee:
Tower Partners Semiconductor Co., LTD., Toyama, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G11C 16/14 (2006.01); G11C 16/04 (2006.01); H01L 27/11546 (2017.01); H01L 27/11553 (2017.01);
U.S. Cl.
CPC ...
G11C 16/14 (2013.01); G11C 16/04 (2013.01); H01L 27/11546 (2013.01); H01L 27/11553 (2013.01);
Abstract
A semiconductor device includes a memory cell formed on a semiconductor substrate. The memory cell includes a first source region and a first drain region that are formed in the semiconductor substrate and a first selection gate, and a first floating gate disposed in series between the first source region and the first drain region. A first floating gate transistor including the first drain region and the first floating gate has a threshold set lower than a threshold of a first selection gate transistor including the first source region and the first selection gate.