The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Jun. 17, 2020
Shanghaitech University, Shanghai, CN;
SHANGHAITECH UNIVERSITY, Shanghai, CN;
Abstract
A low-power SRAM memory cell includes five word lines and four bit lines. The five word lines are a first word line, a second word line, a third word line, a fourth word line and a fifth word line. The four bit lines are a first bit line, a second bit line, a third bit line, and a fourth bit line. During the operation process of calculating a binary 10×11, the first word line is 1, the second word line is 0, the third word line is 0, the fourth word line is 1, the high bit stored in the bit cell is 1, and the low bit is 1. The voltage value of the fifth word line is 0.73 volt. At this time, the first bit line, the second bit line, and the third bit line do not discharge, while the fourth bit line discharges.
Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile