The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 24, 2021
Filed:
Sep. 04, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Kyu-Rie Sim, Hwaseong-si, KR;
Taehui Na, Seoul, KR;
SAMSUNG ELECTRONICS CO., LTD., Gyeonggi-Do, KR;
Abstract
A variable resistance memory device includes memory cell stacks arranged in a first direction, the memory cell stacks including a first memory cell stack and a second memory cell stack. Each of the memory cell stacks includes a plurality of word lines, each word line of the plurality of word lines extending in a second direction intersecting the first direction and arranged in a third direction intersecting the first and second directions, and a memory cell connected to each of the plurality of word lines. Each of the memory cells includes a switching element and a variable resistance element. Each of the plurality of word lines of the first memory cell stack have a first thickness, in the first direction, of first word lines of the first memory cell stack is less than a second thickness, in the first direction, of each of the plurality of word lines of the second memory cell stack.