The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Sep. 06, 2019
Applicant:

Apple Inc., Cupertino, CA (US);

Inventors:

Hyunsoo Kim, Mountain View, CA (US);

Hung Sheng Lin, San Jose, CA (US);

Hyunwoo Nho, Palo Alto, CA (US);

Injae Hwang, Cupertino, CA (US);

Rui Zhang, Sunnyvale, CA (US);

Shengkui Gao, San Jose, CA (US);

Shiping Shen, Cupertino, CA (US);

Sun-Il Chang, San Jose, CA (US);

Assignee:

Apple Inc., Cupertino, CA (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G09G 3/32 (2016.01); H01L 27/32 (2006.01); H01L 51/52 (2006.01);
U.S. Cl.
CPC ...
G09G 3/32 (2013.01); H01L 27/3269 (2013.01); H01L 51/5209 (2013.01); G09G 2320/0233 (2013.01); G09G 2320/045 (2013.01); G09G 2360/145 (2013.01); H01L 2251/558 (2013.01);
Abstract

A device may include a photosensitive transistor and a light-emitting diode. The light-emitting diode may include an anode. The anode may include a first portion having a first thickness and a second portion having a second thickness, wherein the second thickness is less than the first thickness. The device may also include driving circuitry that receives a data signal and causes light to emit from the light-emitting diode in response to the data signal. The photosensitive transistor may generate an electrical signal in response to light emitted from the light-emitting diode during the light emission.


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