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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11099393 B1

PDFFull Text
Date of Patent:
Aug. 24, 2021

Filed:

Nov. 22, 2019

Surface emitting light source with lateral variant refractive index profile

Applicant:

Facebook Technologies, Llc, Menlo Park, CA (US);

Inventors:

Maik Andre Scheller, Redmond, WA (US);

Anurag Tyagi, Kirkland, WA (US);

Assignee:

FACEBOOK TECHNOLOGIES, LLC, Menlo Park, CA (US);

Attorney:

Weaver Austin Villeneuve & Sampson LLP

Primary Examiner:

Ellen E Kim

Int. Cl.
CPC ...
G02B 6/26 (2006.01); G02B 27/01 (2006.01); H01L 23/00 (2006.01); H01L 33/06 (2010.01); H01L 33/08 (2010.01); H01L 33/14 (2010.01); H01L 33/24 (2010.01); H01L 33/30 (2010.01); H01L 33/58 (2010.01); F21V 8/00 (2006.01); H01L 25/16 (2006.01);
U.S. Cl.
CPC ...
G02B 27/0172 (2013.01); G02B 6/0023 (2013.01); H01L 24/08 (2013.01); H01L 25/167 (2013.01); H01L 33/06 (2013.01); H01L 33/08 (2013.01); H01L 33/14 (2013.01); H01L 33/24 (2013.01); H01L 33/30 (2013.01); H01L 33/58 (2013.01); G02B 2027/0178 (2013.01); H01L 2224/08145 (2013.01); H01L 2924/10336 (2013.01); H01L 2924/10349 (2013.01); H01L 2924/12041 (2013.01); H01L 2924/12042 (2013.01); H01L 2924/1426 (2013.01);
Abstract

A micro-LED includes a light emitting device that emits a light beam surface—normally and a plurality of semiconductor layers that modify the light beam. Each semiconductor layer includes a first lateral region and a second lateral region, where the first lateral region and the second lateral region are characterized by different respective refractive indices. The first lateral regions of the plurality of semiconductor layers are arranged in two or more different lateral areas of the semiconductor light source. The second lateral region in each semiconductor layer of the plurality of semiconductor layers includes a semiconductor material with a different respective composition. The plurality of semiconductor layers form a planar optical component that is used to, for example, collimate, converge, diverge, or deflect the light beam emitted by the light emitting device.

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