The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 24, 2021

Filed:

Oct. 26, 2016
Applicant:

Analog Devices, Inc., Norwood, MA (US);

Inventors:

Thomas Kieran Nunan, Carlisle, MA (US);

Li Chen, Belmont, MA (US);

Assignee:

Analog Devices, Inc., Wilmington, MA (US);

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
B81B 7/00 (2006.01); B81C 1/00 (2006.01); B81C 3/00 (2006.01); H01L 21/768 (2006.01); H01L 23/48 (2006.01);
U.S. Cl.
CPC ...
B81B 7/0006 (2013.01); B81C 1/00238 (2013.01); B81C 3/001 (2013.01); H01L 21/76898 (2013.01); H01L 23/481 (2013.01); B81B 2201/0228 (2013.01); B81B 2201/0235 (2013.01); B81B 2201/0242 (2013.01); B81B 2201/0264 (2013.01); B81B 2203/0315 (2013.01); B81B 2207/012 (2013.01); B81B 2207/07 (2013.01); B81B 2207/096 (2013.01); B81C 2203/036 (2013.01); B81C 2203/037 (2013.01); B81C 2203/0792 (2013.01);
Abstract

Integrated circuit substrates having through silicon vias (TSVs) are described. The TSVs are vias extending through the silicon substrate in which the integrated circuitry is formed. The TSVs may be formed prior to formation of the integrated circuitry on the integrated circuit substrate, allowing the use of via materials which can be fabricated at relatively small sizes. The integrated circuit substrates may be bonded with a substrate having a microelectromechanical systems (MEMS) device. In some such situations, the circuitry of the integrated circuit substrate may face away from the MEMS substrate since the TSVs may provide electrical connection from the circuitry side of the integrated circuit substrate to the MEMS device.


Find Patent Forward Citations

Nunan, Thomas. (2021). Through silicon via (tsv) formation in integrated circuits (U.S. Patent No. 11097942). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11097942

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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