The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Apr. 24, 2020
Applicant:

Sony Semiconductor Solutions Corporation, Kanagawa, JP;

Inventor:

Atsushi Masagaki, Kanagawa, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H04N 5/335 (2011.01); H04N 9/04 (2006.01); H04N 5/3745 (2011.01); H01L 27/146 (2006.01);
U.S. Cl.
CPC ...
H04N 9/04557 (2018.08); H01L 27/14603 (2013.01); H01L 27/14621 (2013.01); H01L 27/14641 (2013.01); H01L 27/14645 (2013.01); H04N 5/37457 (2013.01); H04N 9/045 (2013.01); H04N 9/04555 (2018.08); H04N 9/04559 (2018.08);
Abstract

A solid state imaging device includes a pixel array unit in which color filters of a plurality of colors are arrayed with four pixels of vertical 2 pixels×horizontal 2 pixels as a same color unit that receives light of the same color, shared pixel transistors that are commonly used by a plurality of pixels are intensively arranged in one predetermined pixel in a unit of sharing, and a color of the color filter of a pixel where the shared pixel transistors are intensively arranged is a predetermined color among the plurality of colors. The present technology can be applied, for example, to a solid state imaging device such as a back-surface irradiation type CMOS image sensor.


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