The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Mar. 21, 2019
Applicant:
Samsung Electronics Co., Ltd., Suwon-si, KR;
Inventors:
Assignee:
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 23/522 (2006.01); H01L 45/00 (2006.01); H01L 43/12 (2006.01);
U.S. Cl.
CPC ...
H01L 45/1641 (2013.01); H01L 43/12 (2013.01); H01L 45/06 (2013.01); H01L 45/1616 (2013.01);
Abstract
A method of manufacturing a memory device includes forming a transistor on a substrate, forming a lower interlayer insulating layer covering the transistor, forming a hydrogen supply layer on the lower interlayer insulating layer, forming a hydrogen blocking layer on the hydrogen supply layer, annealing the transistor, the lower interlayer insulating layer, and the hydrogen supply layer, forming a memory cell on the hydrogen blocking layer after the annealing, and forming an upper interlayer insulating layer surrounding the memory cell and having a third average hydrogen concentration less than the second average hydrogen concentration.