The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jun. 18, 2019
International Business Machines Corporation, Armonk, NY (US);
Anthony J. Annunziata, Stamford, CT (US);
Bruce B. Doris, Slingerlands, NY (US);
Eugene J. O'Sullivan, Nyack, NY (US);
INTERNATIONAL BUSINESS MACHINES CORPORATION, Armonk, NY (US);
Abstract
A spin-transfer torque magneto-resistive random access memory (STT-MRAM) device is provided. The STT-MRAM device includes a substrate, a dielectric layer and a magnetic tunnel junction (MTJ) stack. The substrate includes a conductor and a landing pad. The MTJ stack includes a reference layer element, a free layer assembly and a barrier layer element. The reference layer element is lined with redeposited metal and is disposed on the landing pad within the dielectric layer. The free layer assembly includes a free layer element, a hard mask layer element disposed on the free layer element, redeposited metal lining sidewalls of the free and hard mask layer elements and dielectric material lining the redeposited metal. The barrier layer element is interposed between and has a same width as the reference layer element and the free layer assembly.