The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Mar. 15, 2018
Applicant:

Osram Opto Semiconductors Gmbh, Regensburg, DE;

Inventors:

Massimo Drago, Riedenburg, DE;

Alexander Frey, Lappersdorf, DE;

Joachim Hertkorn, Wörth an der Donau, DE;

Assignee:

OSRAM OLED GmbH, Regensburg, DE;

Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 33/22 (2010.01); H01L 33/00 (2010.01); H01L 33/12 (2010.01); H01L 33/32 (2010.01);
U.S. Cl.
CPC ...
H01L 33/22 (2013.01); H01L 33/007 (2013.01); H01L 33/0093 (2020.05); H01L 33/12 (2013.01); H01L 33/32 (2013.01); H01L 2933/0091 (2013.01);
Abstract

A method of producing light-emitting diode chips includes A) and C)-F) in order: A) providing a growth substrate, C) producing a structural layer, the structural layer including AlGaInN, where-in y1≥0.5, and a plurality of structural elements with a mean height of at least 50 nm so that a side of the structural layer facing away from the growth substrate is rough, D) producing a cover layer on the structural layer, the cover layer forming the structural layer true to shape and including AlGaInN, wherein x2≥0.6, E) producing a planarization layer on the cover layer, a side of the finished planarization layer is flat and the planarization layer includes AlGaInN, wherein x3+y3≤0.2, and F) growing a functional layer sequence that generates radiation on the planarization layer.


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