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The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Patent No.:

US 11094817 B1

PDFFull Text
Date of Patent:
Aug. 17, 2021

Filed:

Jan. 23, 2020

Drain extended nmos transistor

Applicant:

Texas Instruments Incorporated, Dallas, TX (US);

Inventors:

Xiaoju Wu, Dallas, TX (US);

Robert James Todd, Plano, TX (US);

Henry Litzmann Edwards, Garland, TX (US);

Assignee:

TEXAS INSTRUMENTS INCORPORATED, Dallas, TX (US);

Attorneys:

Andrew R. Ralston

Charles A. Brill

Frank D. Cimino

Primary Examiner:

Calvin Y Choi

Int. Cl.
CPC ...
H01L 29/66 (2006.01); H01L 29/78 (2006.01); H01L 29/10 (2006.01); H01L 29/06 (2006.01); H01L 29/40 (2006.01); H01L 21/74 (2006.01); H01L 21/762 (2006.01); H01L 21/265 (2006.01); H01L 21/324 (2006.01); H01L 21/225 (2006.01); H01L 21/285 (2006.01);
U.S. Cl.
CPC ...
H01L 29/7816 (2013.01); H01L 21/2253 (2013.01); H01L 21/26513 (2013.01); H01L 21/28518 (2013.01); H01L 21/324 (2013.01); H01L 21/74 (2013.01); H01L 21/76202 (2013.01); H01L 21/76224 (2013.01); H01L 29/0653 (2013.01); H01L 29/1083 (2013.01); H01L 29/1095 (2013.01); H01L 29/408 (2013.01); H01L 29/66492 (2013.01); H01L 29/66681 (2013.01); H01L 29/7835 (2013.01);
Abstract

A semiconductor device includes a local oxidation of silicon (LOCOS) structure and a shallow trench isolation (STI) structure formed over a semiconductor substrate. A source region is located between the LOCOS structure and the STI structure. A gate structure is located between the source region and the LOCOS structure. A contact may be located over the STI structure electrically connect to the gate structure.

Find Patent Forward Citations

Wu, Xiaoju. (2021). Drain extended nmos transistor (U.S. Patent No. 11094817). U.S. Patent and Trademark Office. https://idiyas.com/patent/badge/11094817

Data source: USPTO (United States Patent and Trademark Office) public patent records. Weekly synchronization. How IDiyas builds this profile

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