The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Sep. 29, 2017
Epistar Corporation, Hsinchu, TW;
Ya-Yu Yang, Hsinchu, TW;
Shang-Ju Tu, Hsinchu, TW;
Tsung-Cheng Chang, Hsinchu, TW;
Chia-Cheng Liu, Hsinchu, TW;
EPISTAR CORPORATION, Hsinchu, TW;
Abstract
A semiconductor power device includes a substrate, a buffer structure formed on the substrate, a barrier structure formed on the buffer structure, a channel layer formed on the barrier structure, and a barrier layer formed on the channel layer. The barrier structure includes a first functional layer on the buffer structure, a first back-barrier layer on the first functional layer, and an interlayer between the first back-barrier layer and the first functional layer. A material of the first back-barrier layer comprises AlGaN, a material of the first functional layer comprises AlGaN, 0<x1≤1, 0≤x2≤1, and x1≠x2. The interlayer includes a carbon doped or an iron doped material.