The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Sep. 30, 2017
Boe Technology Group Co., Ltd., Beijing, CN;
Beijing Boe Display Technology Co., Ltd., Beijing, CN;
Bingqiang Gui, Beijing, CN;
Lianjie Qu, Beijing, CN;
Yonglian Qi, Beijing, CN;
Hebin Zhao, Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
BEIJING BOE DISPLAY TECHNOLOGY CO., LTD., Beijing, CN;
Abstract
A thin film transistor includes: a bottom gate electrode; a bottom gate electrode insulating layer, a semiconducting active layer and a first insulating layer which are disposed on the bottom gate electrode in sequence; a source electrode and a drain electrode which are disposed at a side of the first insulating layer away from the bottom gate electrode; vias disposed in the first insulating layer at positions which correspond to the source electrode and the drain electrode respectively; and ohmic contact layers disposed on and covering the semiconducting active layer at positions corresponding to the vias respectively. Each of the source electrode and the drain electrode is in contact with a corresponding one of the ohmic contact layers through a corresponding one of the vias.