The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Sep. 23, 2016
Applicant:

Mitsubishi Electric Corporation, Tokyo, JP;

Inventors:

Yasunori Oritsuki, Tokyo, JP;

Yoichiro Tarui, Tokyo, JP;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 29/417 (2006.01); H01L 29/06 (2006.01); H01L 29/16 (2006.01); H01L 29/40 (2006.01); H01L 29/423 (2006.01); H01L 29/739 (2006.01); H01L 29/78 (2006.01); H01L 27/04 (2006.01); H01L 29/12 (2006.01);
U.S. Cl.
CPC ...
H01L 29/41741 (2013.01); H01L 27/04 (2013.01); H01L 29/0619 (2013.01); H01L 29/0696 (2013.01); H01L 29/12 (2013.01); H01L 29/1608 (2013.01); H01L 29/401 (2013.01); H01L 29/41775 (2013.01); H01L 29/42376 (2013.01); H01L 29/7395 (2013.01); H01L 29/78 (2013.01); H01L 29/7802 (2013.01);
Abstract

A present invention includes the following: a third impurity region having a second conductivity type and disposed in an outer peripheral region that is the outer periphery of a cell arrangement region in which a unit cell is disposed; a field insulating film disposed in the outer peripheral region; an interlayer insulating film; a first main electrode disposed on the interlayer insulating film. The third impurity region includes a fourth impurity region having the second conductivity type, having a higher impurity concentration than the third impurity region. A gate wire and a gate pad are disposed in the outer peripheral region. The fourth impurity region is adjacent to the cell arrangement region, surrounds at least a region below the gate pad, and is electrically connected to the first main electrode.


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