The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
May. 24, 2020
Fuji Electric Co., Ltd., Kanagawa, JP;
Tetsutaro Imagawa, Matsumoto, JP;
FUJI ELECTRIC CO., LTD., Kanagawa, JP;
Abstract
There is provided a method of manufacturing a semiconductor device including: forming a cell having a plurality of trench portions, a contact region, being formed by implanting a dopant of a second conductivity type by a first depth and a first implantation amount, and an emitter region, the cell having a length, which is smaller than or equal to a width between the trench portions, the emitter region, having a length, which is greater than a length of the contact region; forming a contact hole, having an opening width which is smaller than the length of the contact region; and forming a plug region by implanting the dopant of the second conductivity type by a second depth, being shallower than the first depth, and a second implantation amount, being greater than or equal to the first implantation amount, in the depth direction of the semiconductor substrate.