The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Apr. 27, 2019
Samsung Electronics Co., Ltd., Suwon-si, KR;
Byongju Kim, Hwaseong-si, KR;
Young-Min Ko, Hwaseong-si, KR;
Jonguk Kim, Yongin-si, KR;
Kwangmin Park, Seoul, KR;
Jeonghee Park, Hwaseong-si, KR;
Dongsung Choi, Hwaseong-si, KR;
SAMSUNG ELECTRONICS CO., LTD., Suwon-si, KR;
Abstract
A variable resistanvce memory device may include a plurality of first conductive lines extending in a first direction, a plurality of second conductive lines extending in a second direction, a plurality of memory cells, each memory cell at a respective intersection, with respect to a top down view, between a corresponding one of the first conductive lines and a corresponding one of the second conductive lines, each memory cell comprising a variable resistance structure and a switching element sandwiched between a top electrode and a bottom electrode, and a first dielectric layer filling a space between the switching elements of the memory cells. A top surface of the first dielectric layer is disposed between bottom and top surfaces of the top electrodes of the memory cells.