The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jul. 10, 2019
Beijing Boe Optoelectronics Technology Co., Ltd., Beijing, CN;
Boe Technology Group Co., Ltd., Beijing, CN;
Haisheng Zhao, Beijing, CN;
Hongxi Xiao, Beijing, CN;
Jiapeng Li, Beijing, CN;
Huigang Jiang, Beijing, CN;
Xiaoguang Pei, Beijing, CN;
BEIJING BOE OPTOELECTRONICS TECHNOLOGY CO., LTD., Beijing, CN;
BOE TECHNOLOGY GROUP CO., LTD., Beijing, CN;
Abstract
The embodiments of the present disclosure provide a photoelectric detector, a method for manufacturing the photoelectric detector, and a detection device. The method for manufacturing the photoelectric detector includes: forming a thin film transistor array layer on a base substrate; forming an organic layer on a side of the thin film transistor array layer facing away from the base substrate; and patterning the organic layer to form a first via hole which enables a signal transmission layer in the thin film transistor array layer to be exposed; and depositing a photoelectric conversion device in the first via hole.