The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Oct. 14, 2019
Canon Kabushiki Kaisha, Tokyo, JP;
Akira Oseto, Kawasaki, JP;
Tatsunori Kato, Kawasaki, JP;
Ryunosuke Ishii, Tokyo, JP;
Takanori Watanabe, Yamato, JP;
Atsushi Suzuki, Zama, JP;
Koichiro Iwata, Kawasaki, JP;
Kazuo Yamazaki, Yokohama, JP;
Hideaki Takada, Yokohama, JP;
Akira Ohtani, Ebina, JP;
CANON KABUSHIKI KAISHA, Tokyo, JP;
Abstract
A semiconductor device has a first transistor of a first conductivity type and a second transistor of a second conductivity type, the first transistor is arranged in an active region of a semiconductor substrate, and a gate electrode and the active region overlap with each other in a plan view and also have a portion located between the source and the drain of the first transistor of the semiconductor substrate. In the channel width direction, an impurity concentration of the second conductivity type is higher at the end than on the center side of the portion.