The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jan. 07, 2020
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Assignee:
Mitsubishi Electric Corporation, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 27/07 (2006.01); H01L 29/739 (2006.01); H01L 29/861 (2006.01); H01L 29/78 (2006.01);
U.S. Cl.
CPC ...
H01L 27/0716 (2013.01); H01L 29/7397 (2013.01); H01L 29/7804 (2013.01); H01L 29/861 (2013.01);
Abstract
A semiconductor device includes a semiconductor substrate, and the semiconductor substrate is divided into an IGBT region, a diode region, and a MOSFET region. A drift layer of n-type is provided in the semiconductor substrate. The drift layer is shared among the IGBT region, the diode region, and the MOSFET region. In the semiconductor substrate, the diode region is always disposed between the IGBT region and the MOSFET region to cause the IGBT region and the MOSFET region to be separated from each other without being adjacent to each other.