The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Sep. 06, 2019
Applicants:

Kabushiki Kaisha Toshiba, Tokyo, JP;

Toshiba Electronic Devices & Storage Corporation, Tokyo, JP;

Inventors:

Keita Saito, Buzen Fukuoka, JP;

Naoya Takai, Yukuhashi Fukuoka, JP;

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 31/00 (2006.01); H01L 25/16 (2006.01); H01L 31/02 (2006.01); H01L 31/0203 (2014.01); H01L 31/167 (2006.01);
U.S. Cl.
CPC ...
H01L 25/167 (2013.01); H01L 31/0203 (2013.01); H01L 31/02005 (2013.01); H01L 31/167 (2013.01);
Abstract

A photocoupler of an embodiment includes a packaging member, a first and a second MOSFET, a semiconductor light receiving element, a semiconductor light emitting element, a first wiring part, and a sealing resin layer. The input terminal includes a first and a second lead. The output terminal includes a third and a fourth lead. The first conductive region includes a signal input part and a bend part. The fourth conductive region includes a signal input part and a bend part. The semiconductor light receiving element is joined to the first and second MOSFETs astride a gap part. The semiconductor light emitting element is joined onto a light receiving region. The first wiring part connects the source electrode of the first MOSFET and the source electrode of the second MOSFET.


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