The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Jun. 29, 2018
Applicant:
Beijing Tongmei Xtal Technology Co., Ltd., Beijing, CN;
Inventors:
Assignee:
BEIJING TONGMEI XTAL TECHNOLOGY CO., LTD., Beijing, CN;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H01L 21/306 (2006.01); B24B 37/08 (2012.01); C30B 29/40 (2006.01); H01L 29/30 (2006.01);
U.S. Cl.
CPC ...
H01L 21/30604 (2013.01); B24B 37/08 (2013.01); C30B 29/40 (2013.01); H01L 29/30 (2013.01);
Abstract
A {100} indium phosphide (InP) wafer with pits distributed on the back side thereof, a method and an etching solution for manufacturing thereof are provided, wherein the pits on the back side have an elongated shape with a maximum dimension of the long axis of 65 μm, and the pits have a maximum depth of 6.0 μm. The {100} indium phosphide (InP) wafer has controllable pits distribution on the back side, thus provide a controllable emissivity of the wafer back side surface for better control of wafer back side heating during the epitaxial growth.