The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Mar. 29, 2019
Applicant:

AU Optronics Corporation, Hsinchu, TW;

Inventors:

Jia-Hong Ye, New Taipei, TW;

Ching-Liang Huang, Hsinchu, TW;

Assignee:
Attorney:
Primary Examiner:
Assistant Examiner:
Int. Cl.
CPC ...
H01L 21/02 (2006.01); C23C 28/04 (2006.01); H01L 27/12 (2006.01); C23C 16/24 (2006.01); C23C 16/40 (2006.01); C23C 16/56 (2006.01); H01L 29/786 (2006.01);
U.S. Cl.
CPC ...
H01L 21/02565 (2013.01); C23C 28/046 (2013.01); H01L 21/022 (2013.01); H01L 21/0228 (2013.01); H01L 21/02164 (2013.01); H01L 21/02532 (2013.01); H01L 21/02675 (2013.01); H01L 27/127 (2013.01); H01L 27/1225 (2013.01); H01L 27/1229 (2013.01); C23C 16/24 (2013.01); C23C 16/402 (2013.01); C23C 16/56 (2013.01); H01L 29/7869 (2013.01); H01L 29/78678 (2013.01);
Abstract

A manufacturing method of a crystallized metal oxide layer includes: providing a substrate; forming a first insulation layer on the substrate; forming a first metal oxide layer on the first insulation layer; forming a second metal oxide layer on the first insulation layer; forming a second insulation layer on the first metal oxide layer and the second metal oxide layer; forming a silicon layer on the second insulation layer; performing a first laser process on a portion of the silicon layer covering the first metal oxide layer; and performing a second laser process on a portion of the silicon layer covering the second metal oxide layer. An active device and a manufacturing method thereof are also provided.


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