The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 17, 2021
Filed:
Oct. 02, 2019
Applied Materials, Inc., Santa Clara, CA (US);
Eswaranand Venkatasubramanian, Santa Clara, CA (US);
Srinivas Gandikota, Santa Clara, CA (US);
Kelvin Chan, San Ramon, CA (US);
Atashi Basu, Menlo Park, CA (US);
Abhijit Basu Mallick, Palo Alto, CA (US);
APPLIED MATERIALS, INC., Santa Clara, CA (US);
Abstract
A microelectronic device on a semiconductor substrate comprises: a gate electrode; and a spacer adjacent to the gate electrode, the spacer comprising: a the low-k dielectric film comprising one or more species of vanadium oxide, which is optionally doped, and an optional silicon nitride or oxide film. Methods comprise depositing a low-k dielectric film optionally sandwiched by a silicon nitride or oxide film to form a spacer adjacent to a gate electrode of a microelectronic device on a semiconductor substrate, wherein the low-k dielectric film comprises a vanadium-containing film.