The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Feb. 28, 2019
Applicant:

Samsung Electronics Co., Ltd., Suwon-si, KR;

Inventors:

Hien Le, Cedar Park, TX (US);

Junhee Yoo, Gyeonggi-do, KR;

Vikas Kumar Sinha, Austin, TX (US);

Robert Bell, Austin, TX (US);

Matthew Derrick Garrett, Austin, TX (US);

Attorney:
Primary Examiner:
Int. Cl.
CPC ...
G06F 12/00 (2006.01); G06F 13/00 (2006.01); G06F 12/0815 (2016.01); G06F 12/0882 (2016.01); G06F 3/06 (2006.01); G06F 13/16 (2006.01);
U.S. Cl.
CPC ...
G06F 12/0815 (2013.01); G06F 3/0611 (2013.01); G06F 3/0659 (2013.01); G06F 12/0882 (2013.01); G06F 13/1668 (2013.01); G06F 3/0679 (2013.01);
Abstract

A system and a method provide a memory-access technique that effectively parallelizes DRAM operations and coherency operations to reduce memory-access latency. The system may include a memory controller, an interconnect and a processor. The interconnect may be coupled to the memory controller. The processor may be coupled to the memory controller through a first path and a second path in which the first path is through the interconnect and the second path bypasses the interconnect. The processor may be configured to send substantially concurrently a memory access request to the memory controller via the first path and send a page activation request or a hint request to the memory controller via the second path so that the DRAM access operations appear to be masked, or hidden by the coherency operations.


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