The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.

The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.

Date of Patent:
Aug. 17, 2021

Filed:

Aug. 08, 2018
Applicant:

Dowa Thermotech Co., Ltd., Tokyo, JP;

Inventors:

Satoru Habuka, Aichi, JP;

Hiroyuki Matsuoka, Aichi, JP;

Wataru Sakakibara, Aichi, JP;

Assignee:
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
C01B 21/082 (2006.01); B21D 37/01 (2006.01); B21D 37/20 (2006.01); B23B 27/14 (2006.01); C23C 16/36 (2006.01); C23C 16/50 (2006.01);
U.S. Cl.
CPC ...
C01B 21/0828 (2013.01); B21D 37/01 (2013.01); B21D 37/20 (2013.01); B23B 27/14 (2013.01); C23C 16/36 (2013.01); C23C 16/50 (2013.01);
Abstract

A vanadium silicon carbonitride film includes vanadium, silicon, carbon, and nitrogen, wherein when vanadium element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as a, and silicon element concentration/(vanadium element concentration+silicon element concentration+carbon element concentration+nitrogen element concentration) in the film is defined as b, 0.30≤a/b≤1.3 and 0.30≤a+b≤0.70 are satisfied, and a total of the vanadium element concentration, the silicon element concentration, the carbon element concentration, and the nitrogen element concentration in the film is 90 [at %] or more.


Find Patent Forward Citations

Loading…