The patent badge is an abbreviated version of the USPTO patent document. The patent badge does contain a link to the full patent document.
The patent badge is an abbreviated version of the USPTO patent document. The patent badge covers the following: Patent number, Date patent was issued, Date patent was filed, Title of the patent, Applicant, Inventor, Assignee, Attorney firm, Primary examiner, Assistant examiner, CPCs, and Abstract. The patent badge does contain a link to the full patent document (in Adobe Acrobat format, aka pdf). To download or print any patent click here.
Patent No.:
Date of Patent:
Aug. 10, 2021
Filed:
Jul. 03, 2017
Applicant:
Mitsubishi Electric Corporation, Tokyo, JP;
Inventors:
Takanobu Fujiwara, Tokyo, JP;
Mitsuhiro Shimozawa, Tokyo, JP;
Assignee:
MITSUBISHI ELECTRIC CORPORATION, Tokyo, JP;
Attorney:
Primary Examiner:
Int. Cl.
CPC ...
H03K 17/16 (2006.01);
U.S. Cl.
CPC ...
H03K 17/161 (2013.01);
Abstract
An NMOS transistor performs electrical conduction or cut-off between a drain and a source by controlling a potential at a gate. A resistive element is connected between a back gate of the NMOS transistor and a high-frequency ground. A first switching circuit is disposed in parallel with the resistive element between the back gate and the high-frequency ground and causes a short circuit between the back gate and the high-frequency ground upon cut-off.